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dc.contributor.authorPandey, Tribhuwan
dc.contributor.authorNayak, Avinash P.
dc.contributor.authorLiu, Jin
dc.contributor.authorMoran, Samuel T.
dc.contributor.authorKim, Joon-Seok
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorLin, Jung-Fu
dc.contributor.authorAkinwande, Deji
dc.contributor.authorSingh, Abhishek K.
dc.date.accessioned2016-11-03T08:32:27Z
dc.date.available2016-11-03T08:32:27Z
dc.date.issued2016-06-20
dc.identifier.citationPandey T, Nayak AP, Liu J, Moran ST, Kim J-S, et al. (2016) Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure. Small 12: 4063–4069. Available: http://dx.doi.org/10.1002/smll.201600808.
dc.identifier.issn1613-6810
dc.identifier.pmid27323330
dc.identifier.doi10.1002/smll.201600808
dc.identifier.urihttp://hdl.handle.net/10754/621574
dc.description.sponsorshipT.P. and A.P.N. contributed equally to this work. Research at Indian Institute of Science was supported by National Program on Micro and Smart Systems (NpMASS) PARC No. 1:22 and DST Nanomission. Research at The University of Texas at Austin was supported in part by a Young Investigator Award (D.A.) from the Defense Threat Reduction Agency (DTRA). J.-F.L. acknowledges financial supports from Deep Carbon Observatory of the Sloan Foundation. The authors acknowledge computational facilities provided by Supercomputing Education and Research Centre, Indian Institute of Science, Bangalore.
dc.publisherWiley-Blackwell
dc.subjectDoping
dc.titlePressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalSmall
dc.contributor.institutionMaterials Research Centre; Indian Institute of Science; Bangalore 560012 India
dc.contributor.institutionDepartment of Electrical and Computer Engineering; The University of Texas at Austin; Austin TX 78712 USA
dc.contributor.institutionDepartment of Geological Sciences; The University of Texas at Austin; Austin TX 78712 USA
dc.contributor.institutionCenter for High Pressure Science and Technology Advanced Research (HPSTAR); Shanghai 201203 P. R. China
kaust.personLi, Lain-Jong


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