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    Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure

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    Type
    Article
    Authors
    Pandey, Tribhuwan
    Nayak, Avinash P.
    Liu, Jin
    Moran, Samuel T.
    Kim, Joon-Seok
    Li, Lain-Jong cc
    Lin, Jung-Fu
    Akinwande, Deji
    Singh, Abhishek K.
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2016-06-20
    Online Publication Date
    2016-06-20
    Print Publication Date
    2016-08
    Permanent link to this record
    http://hdl.handle.net/10754/621574
    
    Metadata
    Show full item record
    Citation
    Pandey T, Nayak AP, Liu J, Moran ST, Kim J-S, et al. (2016) Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure. Small 12: 4063–4069. Available: http://dx.doi.org/10.1002/smll.201600808.
    Sponsors
    T.P. and A.P.N. contributed equally to this work. Research at Indian Institute of Science was supported by National Program on Micro and Smart Systems (NpMASS) PARC No. 1:22 and DST Nanomission. Research at The University of Texas at Austin was supported in part by a Young Investigator Award (D.A.) from the Defense Threat Reduction Agency (DTRA). J.-F.L. acknowledges financial supports from Deep Carbon Observatory of the Sloan Foundation. The authors acknowledge computational facilities provided by Supercomputing Education and Research Centre, Indian Institute of Science, Bangalore.
    Publisher
    Wiley
    Journal
    Small
    DOI
    10.1002/smll.201600808
    PubMed ID
    27323330
    ae974a485f413a2113503eed53cd6c53
    10.1002/smll.201600808
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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