Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure
Type
ArticleAuthors
Pandey, TribhuwanNayak, Avinash P.
Liu, Jin
Moran, Samuel T.
Kim, Joon-Seok
Li, Lain-Jong

Lin, Jung-Fu
Akinwande, Deji
Singh, Abhishek K.
KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2016-06-20Online Publication Date
2016-06-20Print Publication Date
2016-08Permanent link to this record
http://hdl.handle.net/10754/621574
Metadata
Show full item recordCitation
Pandey T, Nayak AP, Liu J, Moran ST, Kim J-S, et al. (2016) Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure. Small 12: 4063–4069. Available: http://dx.doi.org/10.1002/smll.201600808.Sponsors
T.P. and A.P.N. contributed equally to this work. Research at Indian Institute of Science was supported by National Program on Micro and Smart Systems (NpMASS) PARC No. 1:22 and DST Nanomission. Research at The University of Texas at Austin was supported in part by a Young Investigator Award (D.A.) from the Defense Threat Reduction Agency (DTRA). J.-F.L. acknowledges financial supports from Deep Carbon Observatory of the Sloan Foundation. The authors acknowledge computational facilities provided by Supercomputing Education and Research Centre, Indian Institute of Science, Bangalore.Publisher
WileyJournal
SmallPubMed ID
27323330ae974a485f413a2113503eed53cd6c53
10.1002/smll.201600808
Scopus Count
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