Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure
Type
ArticleAuthors
Zhang, Y.Mi, W. B.
Zhang, Xixiang

KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2016-07-20Online Publication Date
2016-07-20Print Publication Date
2016-06-01Permanent link to this record
http://hdl.handle.net/10754/621571
Metadata
Show full item recordAbstract
Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.Citation
Zhang Y, Mi WB, Zhang XX (2016) Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure. EPL (Europhysics Letters) 114: 67003. Available: http://dx.doi.org/10.1209/0295-5075/114/67003.Sponsors
51171126, NSFCPublisher
IOP PublishingJournal
EPL (Europhysics Letters)ae974a485f413a2113503eed53cd6c53
10.1209/0295-5075/114/67003