Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2016-07-20
Print Publication Date2016-06-01
Permanent link to this recordhttp://hdl.handle.net/10754/621571
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AbstractCurrent-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.
CitationZhang Y, Mi WB, Zhang XX (2016) Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure. EPL (Europhysics Letters) 114: 67003. Available: http://dx.doi.org/10.1209/0295-5075/114/67003.
JournalEPL (Europhysics Letters)