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    Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

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    Type
    Article
    Authors
    Zhang, Y.
    Mi, W. B.
    Zhang, Xixiang cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2016-07-20
    Online Publication Date
    2016-07-20
    Print Publication Date
    2016-06-01
    Permanent link to this record
    http://hdl.handle.net/10754/621571
    
    Metadata
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    Abstract
    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.
    Citation
    Zhang Y, Mi WB, Zhang XX (2016) Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure. EPL (Europhysics Letters) 114: 67003. Available: http://dx.doi.org/10.1209/0295-5075/114/67003.
    Sponsors
    51171126, NSFC
    Publisher
    IOP Publishing
    Journal
    EPL (Europhysics Letters)
    DOI
    10.1209/0295-5075/114/67003
    ae974a485f413a2113503eed53cd6c53
    10.1209/0295-5075/114/67003
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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