Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers
KAUST DepartmentMaterials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/621554
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AbstractComplementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
CitationPu J, Funahashi K, Chen C-H, Li M-Y, Li L-J, et al. (2016) Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers. Advanced Materials 28: 4111–4119. Available: http://dx.doi.org/10.1002/adma.201503872.
SponsorsT.T. was partially supported by the Funding Program for the Next Generation of World-Leading Researchers and Grants-in-Aid from MEXT (26107533 "Science of Atomic Layers" and 25000003 "Specially Promoted Research"). J.P. and K.F. was supported by the Leading Graduate Program in Science and Engineering, Waseda University from MEXT, and J.P. was also supported by the Research Fellowship for Young Scientists, Japan Society for the Promotion of Science (JSPS). L.-J.L. acknowledges support from KAUST (Saudi Arabia), Ministry of Science and Technology, Taiwan Consortium of Emergent Crystalline, Academia Sinica Taiwan, and AOARD-134137 (USA).
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