Show simple item record

dc.contributor.authorZheng, Yu Jie
dc.contributor.authorHuang, Yu Li
dc.contributor.authorChen, Yifeng
dc.contributor.authorZhao, Weijie
dc.contributor.authorEda, Goki
dc.contributor.authorSpataru, Catalin D.
dc.contributor.authorZhang, Wenjing
dc.contributor.authorChang, Yung-Huang
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorChi, Dongzhi
dc.contributor.authorQuek, Su Ying
dc.contributor.authorWee, Andrew Thye Shen
dc.date.accessioned2016-11-03T08:31:58Z
dc.date.available2016-11-03T08:31:58Z
dc.date.issued2016-01-26
dc.identifier.citationZheng YJ, Huang YL, Chen Y, Zhao W, Eda G, et al. (2016) Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides. ACS Nano 10: 2476–2484. Available: http://dx.doi.org/10.1021/acsnano.5b07314.
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.pmid26792247
dc.identifier.doi10.1021/acsnano.5b07314
dc.identifier.urihttp://hdl.handle.net/10754/621551
dc.description.abstract© 2016 American Chemical Society. The nature and extent of electronic screening at heterointerfaces and their consequences on energy level alignment are of profound importance in numerous applications, such as solar cells, electronics etc. The increasing availability of two-dimensional (2D) transition metal dichalcogenides (TMDs) brings additional opportunities for them to be used as interlayers in "van der Waals (vdW) heterostructures" and organic/inorganic flexible devices. These innovations raise the question of the extent to which the 2D TMDs participate actively in dielectric screening at the interface. Here we study perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) monolayers adsorbed on single-layer tungsten diselenide (WSe2), bare graphite, and Au(111) surfaces, revealing a strong dependence of the PTCDA HOMO-LUMO gap on the electronic screening effects from the substrate. The monolayer WSe2 interlayer provides substantial, but not complete, screening at the organic/inorganic interface. Our results lay a foundation for the exploitation of the complex interfacial properties of hybrid systems based on TMD materials.
dc.description.sponsorshipThe authors thank Zhuo Wang and Qixing Wang for helping us with transferring the CVD-WSe<INF>2</INF> samples and checking the sample quality, Prof. Satoshi Kera and Kyushu Synchrotron Light Research Center (Japan) for ARPES mapping of the clean Au(111) surface, as well as Xin Luo, Kapildeb Dolui, Suchun Li and Zijing Ding for discussions. A.T.S.W. acknowledges support from MOE Grant R-144-000-321-112. S.Y.Q, and Y.C. acknowledge support from Grant NRF-NRFF2013-07 from the National Research Foundation, Singapore. G.E. acknowledges support from Grant NRF-NRFF2011-02 from the National Research Foundation, Singapore. Computations were performed on the NUS Graphene Research Centre cluster. We acknowledge support from the Singapore National Research Foundation, Prime Minister's Office, under its medium-sized centre program. Sandia National Laboratories is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the U.S. DOE under contract DE-AC04-94AL85000.
dc.publisherAmerican Chemical Society (ACS)
dc.subjectenergy level alignment
dc.subjectfirst principle calculations
dc.subjectorganic-inorganic interface
dc.subjectscanning tunneling microscopy/spectroscopy
dc.subjectscreening effects
dc.subjecttwo-dimensional transition metal dichalcogenides
dc.titleHeterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Nano
dc.contributor.institutionDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singapore
dc.contributor.institutionInstitute of Materials Research and Engineering (IMRE), A∗STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis Way, Singapore, Singapore
dc.contributor.institutionCentre for Advanced 2D Materials, National University of Singapore, Block S14, Level 6, 6 Science Drive 2, Singapore, Singapore
dc.contributor.institutionDepartment of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, Singapore
dc.contributor.institutionSandia National Laboratories, Livermore, CA, United States
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, China
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
dc.contributor.institutionInstitute of High Performance Computing, Agency for Science Technology and Research, 1 Fusionopolis Way, #16-16 Connexis, Singapore, Singapore
kaust.personLi, Lain-Jong
dc.date.published-online2016-01-26
dc.date.published-print2016-02-23


This item appears in the following Collection(s)

Show simple item record