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dc.contributor.authorGandi, Appala
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2016-11-03T08:31:22Z
dc.date.available2016-11-03T08:31:22Z
dc.date.issued2016-02-26
dc.identifier.citationGandi AN, Schwingenschlögl U (2016) Thermal conductivity of bulk and monolayer MoS 2 . EPL (Europhysics Letters) 113: 36002. Available: http://dx.doi.org/10.1209/0295-5075/113/36002.
dc.identifier.issn0295-5075
dc.identifier.issn1286-4854
dc.identifier.doi10.1209/0295-5075/113/36002
dc.identifier.urihttp://hdl.handle.net/10754/621524
dc.description.abstract© Copyright EPLA, 2016. We show that the lattice contribution to the thermal conductivity of MoS2 strongly dominates the carrier contribution in a broad temperature range from 300 to 800 K. Since theoretical insight into the lattice contribution is largely missing, though it would be essential for materials design, we solve the Boltzmann transport equation for the phonons self-consistently in order to evaluate the phonon lifetimes. In addition, the length scale for transition between diffusive and ballistic transport is determined. The low out-of-plane thermal conductivity of bulk MoS2 (2.3 Wm-1K-1 at 300 K) is useful for thermoelectric applications. On the other hand, the thermal conductivity of monolayer MoS2 (131 Wm-1K-1 at 300 K) is comparable to that of Si.
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). Computational resources were provided by the Supercomputing Laboratory of KAUST.
dc.publisherIOP Publishing
dc.titleThermal conductivity of bulk and monolayer MoS2
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalEPL (Europhysics Letters)
kaust.personGandi, Appala
kaust.personSchwingenschlögl, Udo


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