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dc.contributor.authorZhang, Qingyun
dc.contributor.authorYang, Shengyuan A.
dc.contributor.authorMi, Wenbo
dc.contributor.authorCheng, Yingchun
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2016-11-03T08:31:20Z
dc.date.available2016-11-03T08:31:20Z
dc.date.issued2015-12-07
dc.identifier.citationZhang Q, Yang SA, Mi W, Cheng Y, Schwingenschlögl U (2015) Large Spin-Valley Polarization in Monolayer MoTe 2 on Top of EuO(111) . Advanced Materials 28: 959–966. Available: http://dx.doi.org/10.1002/adma.201502585.
dc.identifier.issn0935-9648
dc.identifier.pmid26639918
dc.identifier.doi10.1002/adma.201502585
dc.identifier.urihttp://hdl.handle.net/10754/621522
dc.description.abstractThe electronic properties of monolayer MoTe2 on top of EuO(111) are studied by first-principles calculations. Strong spin polarization is induced in MoTe2, which results in a large valley polarization. In a longitudinal electric field this will result in a valley and spin-polarized charge Hall effect. The direction of the Hall current as well as the valley and spin polarizations can be tuned by an external magnetic field. Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipComputational resources had been provided by KAUST IT. Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). Y.C.C. acknowledges financial support from the National Natural Science Foundation of China (Project No. 61575094).
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201502585/full
dc.titleLarge Spin-Valley Polarization in Monolayer MoTe2 on Top of EuO(111)
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Materials
dc.contributor.institutionResearch Laboratory for Quantum Materials; Singapore University of Technology and Design; Singapore 487372 Singapore
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology; Institute of Advanced Materials Physics; Faculty of Science; Tianjin University; Tianjin 300072 P. R. China
dc.contributor.institutionInstitute of Advanced Materials; Nanjing Tech University; Nanjing 211816 P. R. China
kaust.personZhang, Qingyun
kaust.personSchwingenschlögl, Udo
kaust.acknowledged.supportUnitInformation Technology
dc.date.published-online2015-12-07
dc.date.published-print2016-02


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