On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy
Ng, Tien Khee
Anjum, Dalaver H.
Elafandy, Rami T.
Alyamani, Ahmed Y.
El-Desouki, Munir M.
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Nanofabrication Core Lab
KAUST Grant NumberBAS/1/1614-01-01
Online Publication Date2016-05-23
Print Publication Date2016-06-01
Permanent link to this recordhttp://hdl.handle.net/10754/621519
MetadataShow full item record
AbstractIn this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.
CitationMishra P, Janjua B, Ng TK, Anjum DH, Elafandy RT, et al. (2016) On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy. Optical Materials Express 6: 2052. Available: http://dx.doi.org/10.1364/OME.6.002052.
SponsorsThe authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting, grant no. KACST TIC R2-FP-008, and King Abdullah University of Science and Technology (KAUST) baseline funding, grant no. BAS/1/1614-01-01.
PublisherThe Optical Society
JournalOptical Materials Express