Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Online Publication Date2015-12-04
Print Publication Date2016-01-22
Permanent link to this recordhttp://hdl.handle.net/10754/621518
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Abstract© 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.
CitationMayet AM, Hussain AM, Hussain MM (2015) Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material. Nanotechnology 27: 035202. Available: http://dx.doi.org/10.1088/0957-4484/27/3/035202.
SponsorsWe are very grateful to Professor Tsu-Jae King Liu of the University of California at Berkeley for the valuable feedbacks regarding this manuscript. AM was partially supported by KAUST OCRF Award No. GRP-CF-2011-08-S and AMH is supported under KAUST OCRF CRG-1-2012-HUS-008. MMH directed the work. AM worked on fabrication and measured data. AMH worked on the analysis. All authors have given approval to the final version of the manuscript.