Show simple item record

Monolithic 3D CMOS Using Layered Semiconductors

dc.contributor.authorSachid, Angada B.
dc.contributor.authorTosun, Mahmut
dc.contributor.authorDesai, Sujay B.
dc.contributor.authorHsu, Ching-Yi
dc.contributor.authorLien, Der-Hsien
dc.contributor.authorMadhvapathy, Surabhi R.
dc.contributor.authorChen, Yu-Ze
dc.contributor.authorHettick, Mark
dc.contributor.authorKang, Jeong Seuk
dc.contributor.authorZeng, Yuping
dc.contributor.authorHe, Jr-Hau
dc.contributor.authorChang, Edward Yi
dc.contributor.authorChueh, Yu-Lun
dc.contributor.authorJavey, Ali
dc.contributor.authorHu, Chenming
dc.date.accessioned2016-11-03T08:30:49Z
dc.date.available2016-11-03T08:30:49Z
dc.date.issued2016-02-02
dc.identifier.citationSachid AB, Tosun M, Desai SB, Hsu C-Y, Lien D-H, et al. (2016) Monolithic 3D CMOS Using Layered Semiconductors. Advanced Materials 28: 2547–2554. Available: http://dx.doi.org/10.1002/adma.201505113.
dc.identifier.issn0935-9648
dc.identifier.pmid26833783
dc.identifier.doi10.1002/adma.201505113
dc.identifier.urihttp://hdl.handle.net/10754/621498
dc.description.sponsorshipA.B.S. and M.T. contributed equally to this work. A.B.S. and C.H. conceived the idea. A.B.S., M.T., and A.J. formulated the fabrication flow. A.B.S., M.T., S.B.D., C.-Y.H., D.-H.L., S.R.M., M.H., J.S.K., and Y.Z. fabricated the devices. A.B.S. and M.T. performed electrical measurements. A.B.S. analyzed the data. Y.-Z.C. and Y.-L.C. did transmission electron microscopy. All the authors were involved in preparing the manuscript. A.B.S. was funded by Applied Materials, Inc. and Entegris, Inc. under the I-RiCE Program. M.T. was funded by the Director, Office of Science, Office of Basic Energy Sciences, and Materials Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05Ch11231.
dc.publisherWiley
dc.subjectMetal oxide semiconductors
dc.subjectMonolithic 3D integration
dc.subjectTransition metal dichalcogenides
dc.subjectUltra-low voltage operation
dc.titleMonolithic 3D CMOS Using Layered Semiconductors
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalAdvanced Materials
dc.contributor.institutionElectrical Engineering and Computer Sciences; University of California; Berkeley CA 94720 USA
dc.contributor.institutionMaterial Sciences Division; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USA
dc.contributor.institutionBerkeley Sensor and Actuator Center; University of California; Berkeley CA 94720 USA
dc.contributor.institutionDepartment of Material Sciences and Engineering; National Chao-Tung University; Hsinchu 300 Taiwan
dc.contributor.institutionDepartment of Materials Science and Engineering; National Tsing Hua University; Hsinchu 30013 Taiwan
dc.contributor.institutionJoint Center for Artificial Photosynthesis; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USA
kaust.personLien, Der-Hsien
kaust.personHe, Jr-Hau
dc.date.published-online2016-02-02
dc.date.published-print2016-04


This item appears in the following Collection(s)

Show simple item record