InN-based heterojunction photodetector with extended infrared response
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Solar Center (KSC)
Permanent link to this recordhttp://hdl.handle.net/10754/621496
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Abstract© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.
CitationHsu L-H, Kuo C-T, Huang J-K, Hsu S-C, Lee H-Y, et al. (2015) InN-based heterojunction photodetector with extended infrared response. Optics Express 23: 31150. Available: http://dx.doi.org/10.1364/OE.23.031150.
SponsorsThe work was supported by the National Science Council of Taiwan through the contracts: NSC 101-2221-E-009-046-MY3, MOST 104-2628-E-009-013-MY3, and NSC 102-3113-E-005-001.
PublisherThe Optical Society