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dc.contributor.authorLin, Jheng-Cyuan
dc.contributor.authorTra, Vu Thanh
dc.contributor.authorTsai, Dung-Sheng
dc.contributor.authorLin, Tai-Te
dc.contributor.authorHuang, Po-Cheng
dc.contributor.authorHsu, Wei-Lun
dc.contributor.authorWu, Hui Jun
dc.contributor.authorHuang, Rong
dc.contributor.authorVan Chien, Nguyen
dc.contributor.authorYoshida, Ryuji
dc.contributor.authorLin, Jiunn-Yuan
dc.contributor.authorIkuhara, Yuichi
dc.contributor.authorChiu, Ya-Ping
dc.contributor.authorGwo, Shangjr
dc.contributor.authorTsai, Din Ping
dc.contributor.authorHe, Jr-Hau
dc.contributor.authorChu, Ying-Hao
dc.date.accessioned2016-11-03T08:30:34Z
dc.date.available2016-11-03T08:30:34Z
dc.date.issued2015-11-26
dc.identifier.citationLin J-C, Tra VT, Tsai D-S, Lin T-T, Huang P-C, et al. (2015) Control of the Metal-Insulator Transition at Complex Oxide Heterointerfaces through Visible Light. Advanced Materials 28: 764–770. Available: http://dx.doi.org/10.1002/adma.201503499.
dc.identifier.issn0935-9648
dc.identifier.pmid26607052
dc.identifier.doi10.1002/adma.201503499
dc.identifier.urihttp://hdl.handle.net/10754/621487
dc.description.sponsorshipJ.-C.L. and V.T.T. contributed equally to this work. This work was also supported in part by the National Key Project for Basic Research of China (Grant Nos. 2014CB921104 and 2013CB922301) and the NSF of China (Grant No. 61125403). It was also supported in part by the Ministry of Science and Technology of Taiwan (Grant No. 103-2745-M-002-004-ASP).
dc.publisherWiley-Blackwell
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201503499/full
dc.subjectAu nanoparticles
dc.subjectBand structures
dc.subjectHeterointerfaces
dc.subjectMetal-insulator transition
dc.subjectSurface plasmon resonance
dc.titleControl of the Metal-Insulator Transition at Complex Oxide Heterointerfaces through Visible Light
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalAdvanced Materials
dc.contributor.institutionInstitute of Physics; Academia Sinica; Taipei 11529 Taiwan
dc.contributor.institutionInstitute of Physics; National Chiao Tung University; Hsinchu 30010 Taiwan
dc.contributor.institutionGraduate Institute of Photonics and Optoelectronics; National Taiwan University; Taipei 10617 Taiwan
dc.contributor.institutionResearch Center for Applied Sciences; Academia Sinica; Taipei 11529 Taiwan
dc.contributor.institutionDepartment of Physics; National Sun Yat-sen University; Kaohsiung 804 Taiwan
dc.contributor.institutionDepartment of Physics; National Taiwan University; Taipei 10617 Taiwan
dc.contributor.institutionKey Laboratory of Polar Materials and Devices; Ministry of Education; East China Normal University; Shanghai 200062 China
dc.contributor.institutionNanostructures Research Laboratory; Japan Fine Ceramics Center; Nagoya 456-8587 Japan
dc.contributor.institutionDepartment of Materials Science and Engineering; National Chiao Tung University; Hsinchu 30010 Taiwan
dc.contributor.institutionInstitute of Engineering Innovation; The University of Tokyo; Tokyo 113-8656 Japan
dc.contributor.institutionDepartment of Physics; National Taiwan Normal University; Taipei 116 Taiwan
dc.contributor.institutionDepartment of Physics; National Tsing-Hua University; Hsinchu 30013 Taiwan
kaust.personHe, Jr-Hau


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