Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Online Publication Date2016-02-03
Print Publication Date2015-07
Permanent link to this recordhttp://hdl.handle.net/10754/621357
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AbstractFuture wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.
CitationGhoneim MT, Alfaraj N, Sevilla GAT, Hussain MM (2015) Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET. 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). Available: http://dx.doi.org/10.1109/NANO.2015.7388905.
Conference/Event name15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015