Recent progress in InAs/InP quantum dash nanostructures and devices
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/621347
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AbstractIn this talk, we will give an outline and introduction to the broad inter-band emission devices focusing on the InAs/InP quantum dash material system, device physics and establishment of ultrabroad stimulated emission behavior. In addition, technologies for growing these nanostructures as well as engineer the bandgap of quantum dash based system using epitaxy growth techniques and postgrowth intermixing methods will be presented. At device level, we will focus our discussion on our recent progress in extending the ultra-broad lasing emission from quantum dash lasers, and achievements in broad gain semiconductor optical amplifiers (SOA), mode locked lasers, comb-lasers, wide band superluminsect diodes fabricated on this material system. © 2015 IEEE.
CitationOoi BS, Khan MZM, Ng TK (2015) Recent progress in InAs/InP quantum dash nanostructures and devices. 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC). Available: http://dx.doi.org/10.1109/NMDC.2015.7439230.
Conference/Event name10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015