Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Integrated Nanotechnology Lab
Date
2015-08-12Online Publication Date
2015-08-12Print Publication Date
2015-06Permanent link to this record
http://hdl.handle.net/10754/621344
Metadata
Show full item recordAbstract
We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.Citation
Hanna AN, Hussain AM, Hussain MM (2015) Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits. 2015 73rd Annual Device Research Conference (DRC). Available: http://dx.doi.org/10.1109/DRC.2015.7175633.Conference/Event name
73rd Annual Device Research Conference, DRC 2015ae974a485f413a2113503eed53cd6c53
10.1109/DRC.2015.7175633