Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Online Publication Date2015-08-12
Print Publication Date2015-06
Permanent link to this recordhttp://hdl.handle.net/10754/621344
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AbstractWe report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.
CitationHanna AN, Hussain AM, Hussain MM (2015) Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits. 2015 73rd Annual Device Research Conference (DRC). Available: http://dx.doi.org/10.1109/DRC.2015.7175633.
Conference/Event name73rd Annual Device Research Conference, DRC 2015