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dc.contributor.authorKe, Jr Jian
dc.contributor.authorWei, Tzu Chiao
dc.contributor.authorTsai, Dung Sheng
dc.contributor.authorLin, Chun-Ho
dc.contributor.authorHe, Jr-Hau
dc.date.accessioned2016-10-24T13:47:27Z
dc.date.available2016-10-24T13:47:27Z
dc.date.issued2016-09-26
dc.identifier.citationKe J-J, Wei T-C, Tsai D-S, Lin C-H, He J-H (2016) Surface effects of electrode-dependent switching behavior of resistive random-access memory. Applied Physics Letters 109: 131603. Available: http://dx.doi.org/10.1063/1.4963671.
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.4963671
dc.identifier.urihttp://hdl.handle.net/10754/621163
dc.description.abstractThe surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device's switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/109/13/10.1063/1.4963671
dc.rightsArchived with thanks to Applied Physics Letters. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
dc.titleSurface effects of electrode-dependent switching behavior of resistive random-access memory
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInstitute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
kaust.personKe, Jr Jian
kaust.personLin, Chun-Ho
kaust.personHe, Jr-Hau
refterms.dateFOA2017-09-26T00:00:00Z


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