Surface effects of electrode-dependent switching behavior of resistive random-access memory
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AbstractThe surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device's switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.
CitationKe J-J, Wei T-C, Tsai D-S, Lin C-H, He J-H (2016) Surface effects of electrode-dependent switching behavior of resistive random-access memory. Applied Physics Letters 109: 131603. Available: http://dx.doi.org/10.1063/1.4963671.
JournalApplied Physics Letters