First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Majid, Mohammed Abdul; Al-Jabr, Ahmad; Elafandy, Rami T.; Oubei, Hassan M.; Alias, Mohd Sharizal; Alnahhas, Bayan A.; Anjum, Dalaver H.; Ng, Tien Khee; Shehata, Mohamed; Ooi, Boon S.

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Abstract

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Citation

Mohammed A. Majid ; Ahmad A. Al-Jabr ; Rami T. Elafandy ; Hassan M. Oubei ; Mohd S. Alias ; Bayan A. Alnahhas ; Dalaver H. Anjum ; Tien Khee Ng ; Mohamed Shehata and Boon S. Ooi " First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique ", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670A (March 7, 2016); doi:10.1117/12.2202768; http://dx.doi.org/10.1117/12.2202768

Acknowledgements

The authors gratefully acknowledge the financial support from KAUST baseline funding, Competitive Research Grant (CRG), and KACST Technology Innovation Center for Solid State Lighting at KAUST.