Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers
Cuong, Nguyen Thanh
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
MetadataShow full item record
AbstractThe carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.
CitationEnhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers 2016, 94 (1) Physical Review B
SponsorsThis paper was supported by the Funding Program for the Next Generation of World-Leading Researchers and Grantsin- Aid from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) (Grants No. 16K13618, No. 26107533, No. 26102012, and No. 25000003) (T.T.) and the Leading Graduate Program in Science and Engineering, Waseda University from MEXT (J.P. and K.K.). J.P. was also supported by the Research Fellowship for Young Scientists from JSPS. L.J.L. acknowledges support from KAUST (Saudi Arabia), the Ministry of Science and Technology, the Taiwan Consortium of Emergent Crystalline, Academia Sinica, and the Asian Office of Aerospace Research and Development (AOARD)-134137 (USA). H.O. was supported by Japan Society for the Promotion of Science-Grants-in-Aid for Scientific Research (JSPS-KAKENHI) (Grants No. 25246023 and No. 25106007) and the Asahi Glass Foundation. This paper was also supported in part by the Network Joint Research Center for Materials and Devices. S.O. was supported by JSPS-KAKENHI (Grants No. 25246010, No. 16H00898, and No. 16H06331).
PublisherAmerican Physical Society (APS)
JournalPhysical Review B