Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics
Ng, Tien Khee
Elafandy, Rami T.
Consiglio, Giuseppe Bernardo
Ajia, Idris A.
Roqan, Iman S.
Alyamani, Ahmed Y.
El-Desouki, Munir M.
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Solar Center (KSC)
Materials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
KAUST Grant NumberBAS/1/1614-01-01
Permanent link to this recordhttp://hdl.handle.net/10754/617876
MetadataShow full item record
AbstractA droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley–Read–Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.
CitationDroop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics 2016, 16 (7):4616 Nano Letters
SponsorsThe authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).
PublisherAmerican Chemical Society (ACS)
- Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters.
- Authors: Zhao C, Ng TK, Wei N, Prabaswara A, Alias MS, Janjua B, Shen C, Ooi BS
- Issue date: 2016 Feb 10
- Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics.
- Authors: Guo W, Zhang M, Bhattacharya P, Heo J
- Issue date: 2011 Apr 13
- Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes.
- Authors: Sadaf SM, Ra YH, Nguyen HP, Djavid M, Mi Z
- Issue date: 2015 Oct 14
- An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.
- Authors: Zhao C, Ng TK, Prabaswara A, Conroy M, Jahangir S, Frost T, O'Connell J, Holmes JD, Parbrook PJ, Bhattacharya P, Ooi BS
- Issue date: 2015 Oct 28
- Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.
- Authors: Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z
- Issue date: 2012 Mar 14