Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics
KAUST DepartmentPhotonics Laboratory
MetadataShow full item record
AbstractWe achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (Ith), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (ηi), from 63% to 68%, and increased internal losses αi, from 14.3 to 18.6 cm−1. Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs.
CitationEffect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics 2016, 10 (3):036004 Journal of Nanophotonics
SponsorsThis work was supported by King Abdullah University of Science and Technology (KAUST) under Baseline Funding (BAS/1/1614-01-01) and Competitive Research Grant (CRG-1-2012-OOI-010).
PublisherSPIE-Intl Soc Optical Eng
JournalJournal of Nanophotonics