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dc.contributor.authorZhang, Q.
dc.contributor.authorLi, P.
dc.contributor.authorWen, Yan
dc.contributor.authorZhao, C.
dc.contributor.authorZhang, Junwei
dc.contributor.authorManchon, Aurelien
dc.contributor.authorMi, W. B.
dc.contributor.authorPeng, Y.
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2016-07-28T13:26:56Z
dc.date.available2016-07-28T13:26:56Z
dc.date.issued2016-07-22
dc.identifier.citationAnomalous Hall effect in Fe/Au multilayers 2016, 94 (2) Physical Review B
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.doi10.1103/PhysRevB.94.024428
dc.identifier.urihttp://hdl.handle.net/10754/617714
dc.description.abstractTo understand the interfacial scattering effect on the anomalous Hall effect (AHE), we prepared multilayers of (Fe(36/n)nm/Au(12/n)nm)n using an e-beam evaporator. This structure design allowed us to investigate the effect of interfacial scattering on the AHE, while keeping the samples' thickness and composition unchanged. We measured the (magneto)transport properties of the samples in a wide temperature range (10–310 K) with magnetic fields up to 50 kOe. We found that the scaling between the anomalous Hall resistivity (ρAHE) and longitudinal resistivity (ρxx) can be roughly described by ρAHE∼ργxx with γ=2.65±0.10 and 1.90 ± 0.04 for samples from n=1 to n=4 and samples from n=4 to n=12, respectively. Our quantitative analysis results showed that the interfacial scattering suppresses the contribution of the intrinsic mechanism and gives rise to a side-jump contribution.
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
dc.language.isoen
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.94.024428
dc.rightsArchived with thanks to Physical Review B
dc.titleAnomalous Hall effect in Fe/Au multilayers
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSpintronics Theory Group
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, People's Republic of China
dc.contributor.institutionKey Laboratory of Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, Gansu, People's Republic of China
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personZhang, Q.
kaust.personLi, P.
kaust.personWen, Yan
kaust.personZhao, C.
kaust.personZhang, Junwei
kaust.personManchon, Aurelien
kaust.personPeng, Y.
kaust.personZhang, Xixiang
refterms.dateFOA2018-06-13T13:06:36Z


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