High-Sensitivity, Highly Transparent, Gel-Gated MoS2 Phototransistor on Biodegradable Nanopaper
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Solar Center (KSC)
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AbstractTransition metal dichalcogenides hold great promise for a variety of novel electrical, optical and mechanical devices and applications. Among them, molybdenum disulphide (MoS2) is gaining increasing attention as the gate dielectric and semiconductive channel for high-perfomance field effect transistors. Here we report on the first MoS2 phototransistor built on flexible, transparent and biodegradable substrate with electrolyte gate dielectric. We have carried out systematic studies on its electrical and optoelectronic properties. The MoS2 phototransistor exhibited excellent photo responsivity of ~1.5 kA/W, about two times higher compared to typical back-gated devices reported in previous studies. The device is highly transparent at the same time with an average optical transmittance of 82%. Successful fabrication of phototransistors on flexible cellulose nanopaper with excellent performance and transparency suggests that it is feasible to achieve an ecofriendly, biodegradable phototransistor with great photoresponsivity, broad spectral range and durable flexibility.
CitationHigh-Sensitivity, Highly Transparent, Gel-Gated MoS2 Phototransistor on Biodegradable Nanopaper 2016 Nanoscale
PublisherRoyal Society of Chemistry (RSC)