High-Sensitivity, Highly Transparent, Gel-Gated MoS2 Phototransistor on Biodegradable Nanopaper
Type
ArticleAuthors
Zhang, Qing
Bao, Wenzhong
Gong, Amy
Gong, Tao
Ma, Dakang
Wan, Jiayu
Dai, Jiaqi
Munday, J
He, Jr-Hau

Hu, Liangbing
Zhang, Daihua
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Solar Center (KSC)
Date
2016Permanent link to this record
http://hdl.handle.net/10754/614820
Metadata
Show full item recordAbstract
Transition metal dichalcogenides hold great promise for a variety of novel electrical, optical and mechanical devices and applications. Among them, molybdenum disulphide (MoS2) is gaining increasing attention as the gate dielectric and semiconductive channel for high-perfomance field effect transistors. Here we report on the first MoS2 phototransistor built on flexible, transparent and biodegradable substrate with electrolyte gate dielectric. We have carried out systematic studies on its electrical and optoelectronic properties. The MoS2 phototransistor exhibited excellent photo responsivity of ~1.5 kA/W, about two times higher compared to typical back-gated devices reported in previous studies. The device is highly transparent at the same time with an average optical transmittance of 82%. Successful fabrication of phototransistors on flexible cellulose nanopaper with excellent performance and transparency suggests that it is feasible to achieve an ecofriendly, biodegradable phototransistor with great photoresponsivity, broad spectral range and durable flexibility.Citation
High-Sensitivity, Highly Transparent, Gel-Gated MoS2 Phototransistor on Biodegradable Nanopaper 2016 NanoscalePublisher
Royal Society of Chemistry (RSC)Journal
NanoscaleAdditional Links
http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR01534Dae974a485f413a2113503eed53cd6c53
10.1039/C6NR01534D