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dc.contributor.authorGreil, J.
dc.contributor.authorAssali, S.
dc.contributor.authorIsono, Y.
dc.contributor.authorBelabbes, Abderrezak
dc.contributor.authorBechstedt, F.
dc.contributor.authorValega Mackenzie, F. O.
dc.contributor.authorSilov, A. Yu.
dc.contributor.authorBakkers, E. P. A. M.
dc.contributor.authorHaverkort, J. E. M.
dc.date.accessioned2016-06-27T10:31:03Z
dc.date.available2016-06-27T10:31:03Z
dc.date.issued2016-05-13
dc.identifier.citationOptical Properties of Strained Wurtzite Gallium Phosphide Nanowires 2016, 16 (6):3703 Nano Letters
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.pmid27175743
dc.identifier.doi10.1021/acs.nanolett.6b01038
dc.identifier.urihttp://hdl.handle.net/10754/614818
dc.description.abstractWurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.
dc.description.sponsorshipJ.G. acknowledges funding by the Austrian Science Fund (FWF): Proj. No. J3540-N30. This work was supported by the Dutch Organization for Scientific Research (NWO-VICI 700.10.441).
dc.language.isoen
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b01038
dc.rightsACS AuthorChoice - This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html
dc.subjectband structure
dc.subjectlocalized state
dc.subjectphotoluminescence
dc.subjectstrain
dc.subjectsymmetry
dc.subjectWurtzite semiconductor
dc.titleOptical Properties of Strained Wurtzite Gallium Phosphide Nanowires
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNano Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Applied Physics, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
dc.contributor.institutionDepartment of Mechanical Engineering, Kobe University, Kobe 657-8501, Japan
dc.contributor.institutionInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germany
dc.contributor.institutionTNO Technical Sciences, De Rondom 1, 5612 AP, Eindhoven, The Netherlands
dc.contributor.institutionKavli Institute of Nanoscience, Delft University of Technology, 2600 GA, Delft, The Netherlands
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personBelabbes, Abderrezak
refterms.dateFOA2018-06-13T10:35:16Z
dc.date.published-online2016-05-13
dc.date.published-print2016-06-08


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