Embargo End Date2017-05-15
Permanent link to this recordhttp://hdl.handle.net/10754/609456
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Access RestrictionsAt the time of archiving, the student author of this thesis opted to temporarily restrict access to it. The full text of this thesis became available to the public after the expiration of the embargo on 2017-05-15.
AbstractTypically, in the semiconductor industry pn heterojunctions have been used as either light-emitting diodes (LED) or photodiodes by applying forward current bias or reverse voltage bias, respectively. However, since both devices use the same structure, the light emitting and detecting properties could be combine in one single device, namely LED-based photodetector. Therefore, by integrating LED-based photodetectors as either transmitter or receiver, optical wireless communication could be easily implemented for bidirectional visible light communication networks at low-cost. Therefore, this dissertation focus on the investigation of the photodetection characteristics of InGaN LED-based photodetectors for visible light communication in the blue region. In this regard, we obtain external quantum efficiency of 10 % and photoresponse rise time of 71 μs at 405-nm illumination, revealing high-performance photodetection characteristics. Furthermore, we use orthogonal frequency division multiplexing quadrature amplitude modulation codification scheme to enlarge the operational bandwidth. Consequently, the transmission rate of the communication is efficiently enhanced up to 420 Mbit/s in visible light communication.
CitationHo, K.-T. (2016). Photodetector Characteristics in Visible Light Communication. KAUST Research Repository. https://doi.org/10.25781/KAUST-V0GW4