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dc.contributor.authorKelly, Leah L
dc.contributor.authorRacke, David A
dc.contributor.authorSchulz, Philip
dc.contributor.authorLi, Hong
dc.contributor.authorWinget, Paul
dc.contributor.authorKim, Hyungchul
dc.contributor.authorNdione, Paul
dc.contributor.authorSigdel, Ajaya K
dc.contributor.authorBredas, Jean-Luc
dc.contributor.authorBerry, Joseph J
dc.contributor.authorGraham, Samuel
dc.contributor.authorMonti, Oliver L A
dc.date.accessioned2016-04-27T12:03:07Z
dc.date.available2016-04-27T12:03:07Z
dc.date.issued2016-02-12
dc.identifier.citationSpectroscopy and control of near-surface defects in conductive thin film ZnO 2016, 28 (9):094007 Journal of Physics: Condensed Matter
dc.identifier.issn0953-8984
dc.identifier.issn1361-648X
dc.identifier.doi10.1088/0953-8984/28/9/094007
dc.identifier.urihttp://hdl.handle.net/10754/607208
dc.description.abstractThe electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.
dc.description.sponsorshipThis work was supported as part of the Center for Interface Science: Solar Electric Materials (CISSEM), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award Number DE-SC0001084.
dc.language.isoen
dc.publisherIOP Publishing
dc.relation.urlhttp://stacks.iop.org/0953-8984/28/i=9/a=094007?key=crossref.f23aa26cd74fc8e4fb3da44c0fd1fc35
dc.rightsArchived with thanks to Journal of Physics: Condensed Matter
dc.titleSpectroscopy and control of near-surface defects in conductive thin film ZnO
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentLaboratory for Computational and Theoretical Chemistry of Advanced Materials
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Physics: Condensed Matter
dc.eprint.versionPost-print
dc.contributor.institutionUniversity of Arizona, Department of Chemistry & Biochemistry, 1306 E. University Blvd., Tucson, Arizona 85721, USA
dc.contributor.institutionNational Renewable Energy Laboratory, National Center for Photovoltaics, Golden, Colorado, 80401, USA
dc.contributor.institutionPrinceton University, Department of Electrical Engineering, Princeton, New Jersey 08544, USA
dc.contributor.institutionGeorgia Institute of Technology, School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332–0400, USA
dc.contributor.institutionUniversity of Arizona, Department of Physics, 1118 E. Fourth Street, Tucson, Arizona 85721, USA.
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personBredas, Jean-Luc
refterms.dateFOA2017-02-12T00:00:00Z
dc.date.published-online2016-02-12
dc.date.published-print2016-03-09


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