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    Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

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    Type
    Article
    Authors
    Omran, Hesham cc
    Alahmadi, Hamzah cc
    Salama, Khaled N. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    KAUST Grant Number
    FCC/1/1972-05-01
    Date
    2016-04-21
    Online Publication Date
    2016-04-21
    Print Publication Date
    2016-06
    Permanent link to this record
    http://hdl.handle.net/10754/606953
    
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    Abstract
    Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.
    Citation
    Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors 2016:1 IEEE Transactions on Circuits and Systems I: Regular Papers
    Sponsors
    This work was supported by the Advanced Membranes and Porous Materials Center (AMPMC) under grant FCC/1/1972-05-01 and by King Abdullah University of Science and Technology (KAUST).
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    IEEE Transactions on Circuits and Systems I: Regular Papers
    DOI
    10.1109/TCSI.2016.2537824
    Additional Links
    http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7457630
    ae974a485f413a2113503eed53cd6c53
    10.1109/TCSI.2016.2537824
    Scopus Count
    Collections
    Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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