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dc.contributor.authorZhao, Chao
dc.contributor.authorNg, Tien Khee
dc.contributor.authorJahangir, Shafat
dc.contributor.authorFrost, Thomas
dc.contributor.authorBhattacharya, Pallab
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2018-05-01T13:44:31Z
dc.date.available2016-04-24T06:47:16Z
dc.date.available2018-05-01T13:44:31Z
dc.date.issued2016-08-22
dc.identifier.citationZhao, C., Ng, T. K., Jahangir, S., Frost, T., Bhattacharya, P., & Ooi, B. S. (2016). InGaN/GaN nanowire LEDs and lasers. 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). doi:10.1109/nusod.2016.7547051
dc.identifier.doi10.1109/NUSOD.2016.7547051
dc.identifier.urihttp://hdl.handle.net/10754/606856
dc.description.abstractThe large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.
dc.subjectInGaN/GaN quantum-disks-in-nanowire
dc.subjectlight-emitting diodes
dc.subjectlaser
dc.subjectMolecular Beam Epitaxy
dc.titleInGaN/GaN Nanowire LEDs and Lasers
dc.typeConference Paper
dc.contributor.departmentPhotonics Laboratory
dc.conference.date11-15 July 2016
dc.conference.name16th International Conference on Numerical Simulation of Optoelectronic Devices
dc.conference.locationSydney, Australia
dc.eprint.versionPre-print
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan
refterms.dateFOA2018-06-14T08:27:16Z
dc.date.published-online2016-08-22
dc.date.published-print2016-07


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