KAUST DepartmentPhotonics Laboratory
Online Publication Date2016-08-22
Print Publication Date2016-07
Permanent link to this recordhttp://hdl.handle.net/10754/606856
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AbstractThe large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.
CitationZhao, C., Ng, T. K., Jahangir, S., Frost, T., Bhattacharya, P., & Ooi, B. S. (2016). InGaN/GaN nanowire LEDs and lasers. 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). doi:10.1109/nusod.2016.7547051
Conference/Event name16th International Conference on Numerical Simulation of Optoelectronic Devices