In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition
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ArticleAuthors
Avila-Avendano, JesusMejia, Israel
Alshareef, Husam N.

Guo, Zaibing
Young, Chadwin
Quevedo-Lopez, Manuel A.

KAUST Department
Functional Nanomaterials and Devices Research GroupMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Thin Films & Characterization
Date
2016-04-10Online Publication Date
2016-04-10Print Publication Date
2016-06Permanent link to this record
http://hdl.handle.net/10754/605000
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In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.Citation
In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition 2016 Thin Solid FilmsSponsors
Author would like to thank CONACYT for partial financial support for this project.Publisher
Elsevier BVJournal
Thin Solid FilmsAdditional Links
http://linkinghub.elsevier.com/retrieve/pii/S0040609016300694ae974a485f413a2113503eed53cd6c53
10.1016/j.tsf.2016.04.010