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dc.contributor.authorConroy, Michele Ann
dc.contributor.authorLi, Haoning
dc.contributor.authorKusch, Gunnar
dc.contributor.authorZhao, Chao
dc.contributor.authorOoi, Boon S.
dc.contributor.authorPaul, Edwards
dc.contributor.authorMartin, Robert W.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorParbrook, Peter
dc.date.accessioned2016-03-15T13:54:51Z
dc.date.available2016-03-15T13:54:51Z
dc.date.issued2016
dc.identifier.citationSite controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods 2016 Nanoscale
dc.identifier.issn2040-3364
dc.identifier.issn2040-3372
dc.identifier.doi10.1039/C6NR00116E
dc.identifier.urihttp://hdl.handle.net/10754/601362
dc.description.abstractWe report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.
dc.description.sponsorshipThis research was enabled by the Irish Higher Education Authority Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects, and by Science Foundation Ireland (SFI) under Grant no. SFI/10/IN.1/I2993. PJP acknowledges funding from SFI Engineering Professorship scheme (07/EN/E001A) and MC acknowledges PhD research scholarship from INSPIRE. This work was conducted under the framework of the Irish Government's Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007–2013 with the assistance of the European Regional Development Fund. RWM and GK acknowledge funding from the Engineering and Physical Sciences Research Council (EPSRC) (EP/M003132/1) of the UK. We also acknowledge the support of Duc V. Dinh for his help with the PL spectra and William Jagoe for his illustrations in the article.
dc.language.isoen
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR00116E
dc.rightsArchived with thanks to Nanoscale
dc.titleSite controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Characterization
dc.identifier.journalNanoscale
dc.eprint.versionPost-print
dc.contributor.institutionTyndall National Institute, Dyke Parade, Cork City, Ireland
dc.contributor.institutionSchool of Engineering, University College Cork, Cork City, Ireland
dc.contributor.institutionDepartment of Chemistry, University College Cork, Cork City, Ireland
dc.contributor.institutionAMBER@CRANN, Trinity College Dublin, Dublin City, Ireland
dc.contributor.institutionDepartment of Physics, SUPA, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, U.K.
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personZhao, Chao
kaust.personOoi, Boon S.
refterms.dateFOA2017-03-10T00:00:00Z


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