High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon
AuthorsSevilla, Galo T.
Almuslem, A. S.
Hussain, Aftab M.
Hussain, Aftab M.
Hussain, Muhammad Mustafa
KAUST DepartmentIntegrated Nanotechnology Lab
Electrical Engineering Program
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
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AbstractThinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.
CitationHigh performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon 2016, 108 (9):094102 Applied Physics Letters
SponsorsThe authors acknowledge KAUST OCRF Grant No. CRG-1-2012-HUS-008.
JournalApplied Physics Letters