Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
KAUST DepartmentLaboratory of Nano Oxides for Sustainable Energy
Material Science and Engineering Program
Nanofabrication Core Lab
Physical Science and Engineering (PSE) Division
Online Publication Date2016-02-29
Print Publication Date2016-04
Permanent link to this recordhttp://hdl.handle.net/10754/600453
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AbstractFerroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.
CitationOptically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions 2016, 7:10808 Nature Communications
SponsorsThis work was supported by King Abdullah University of Science and Technology (KAUST).
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- Issue date: 2013 Jul
- Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers.
- Authors: Wang L, Cho MR, Shin YJ, Kim JR, Das S, Yoon JG, Chung JS, Noh TW
- Issue date: 2016 Jun 8
- Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier.
- Authors: Xi Z, Ruan J, Li C, Zheng C, Wen Z, Dai J, Li A, Wu D
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- Ferroelectric tunnel junctions with graphene electrodes.
- Authors: Lu H, Lipatov A, Ryu S, Kim DJ, Lee H, Zhuravlev MY, Eom CB, Tsymbal EY, Sinitskii A, Gruverman A
- Issue date: 2014 Nov 24
- The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO<sub>2</sub>.
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