• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguideTheses and Dissertations LibguideSubmit an Item

    Statistics

    Display statistics

    Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    ncomms10808.pdf
    Size:
    1.089Mb
    Format:
    PDF
    Description:
    Main article
    Download
    Thumbnail
    Name:
    ncomms10808-s1.pdf
    Size:
    1.052Mb
    Format:
    PDF
    Description:
    Supplemental files
    Download
    Type
    Article
    Authors
    Hu, Weijin cc
    Wang, Zhihong
    Yu, Weili
    Wu, Tao cc
    KAUST Department
    Laboratory of Nano Oxides for Sustainable Energy
    Material Science and Engineering Program
    Nanofabrication Core Lab
    Patterning
    Physical Science and Engineering (PSE) Division
    Date
    2016-02-29
    Online Publication Date
    2016-02-29
    Print Publication Date
    2016-04
    Permanent link to this record
    http://hdl.handle.net/10754/600453
    
    Metadata
    Show full item record
    Abstract
    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.
    Citation
    Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions 2016, 7:10808 Nature Communications
    Sponsors
    This work was supported by King Abdullah University of Science and Technology (KAUST).
    Publisher
    Springer Nature
    Journal
    Nature Communications
    DOI
    10.1038/ncomms10808
    PubMed ID
    26924259
    Additional Links
    http://www.nature.com/doifinder/10.1038/ncomms10808
    ae974a485f413a2113503eed53cd6c53
    10.1038/ncomms10808
    Scopus Count
    Collections
    Nanofabrication Core Lab; Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

    entitlement

    Related articles

    • Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.
    • Authors: Wen Z, Li C, Wu D, Li A, Ming N
    • Issue date: 2013 Jul
    • Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier.
    • Authors: Xi Z, Ruan J, Li C, Zheng C, Wen Z, Dai J, Li A, Wu D
    • Issue date: 2017 May 17
    • Ferroelectric tunnel junctions with graphene electrodes.
    • Authors: Lu H, Lipatov A, Ryu S, Kim DJ, Lee H, Zhuravlev MY, Eom CB, Tsymbal EY, Sinitskii A, Gruverman A
    • Issue date: 2014 Nov 24
    • Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers.
    • Authors: Wang L, Cho MR, Shin YJ, Kim JR, Das S, Yoon JG, Chung JS, Noh TW
    • Issue date: 2016 Jun 8
    • The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO<sub>2</sub>.
    • Authors: Goh Y, Jeon S
    • Issue date: 2018 Aug 17
    DSpace software copyright © 2002-2022  DuraSpace
    Quick Guide | Contact Us | KAUST University Library
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.