Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
Type
ArticleKAUST Department
Laboratory of Nano Oxides for Sustainable EnergyMaterial Science and Engineering Program
Nanofabrication Core Lab
Patterning
Physical Science and Engineering (PSE) Division
Date
2016-02-29Online Publication Date
2016-02-29Print Publication Date
2016-04Permanent link to this record
http://hdl.handle.net/10754/600453
Metadata
Show full item recordAbstract
Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.Citation
Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions 2016, 7:10808 Nature CommunicationsSponsors
This work was supported by King Abdullah University of Science and Technology (KAUST).Publisher
Springer NatureJournal
Nature CommunicationsPubMed ID
26924259Additional Links
http://www.nature.com/doifinder/10.1038/ncomms10808ae974a485f413a2113503eed53cd6c53
10.1038/ncomms10808
Scopus Count
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