Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
KAUST DepartmentMaterials Science and Engineering Program
Nanofabrication Core Lab
Physical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/600453
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AbstractFerroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.
CitationOptically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions 2016, 7:10808 Nature Communications
SponsorsThis work was supported by King Abdullah University of Science and Technology (KAUST).
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