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dc.contributor.authorWei, Yaguang
dc.contributor.authorWu, Wenzhuo
dc.contributor.authorGuo, Rui
dc.contributor.authorYuan, Dajun
dc.contributor.authorDas, Suman
dc.contributor.authorWang, Zhong Lin
dc.date.accessioned2016-02-28T06:44:34Z
dc.date.available2016-02-28T06:44:34Z
dc.date.issued2010-09-08
dc.identifier.citationWei Y, Wu W, Guo R, Yuan D, Das S, et al. (2010) Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays. Nano Lett 10: 3414–3419. Available: http://dx.doi.org/10.1021/nl1014298.
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.pmid20681617
dc.identifier.doi10.1021/nl1014298
dc.identifier.urihttp://hdl.handle.net/10754/600180
dc.description.abstractThis article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices. © 2010 American Chemical Society.
dc.description.sponsorshipResearch was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST Global Research Partnership, NSF (DMS0706436, CMMI 0403671), MANA WPI program from NIMS, Japan, and the Georgia Institute of Technology. The authors thank Dr. Jung-II Hong and Shu Xiang for technical assistance and discussions on XRD measurements.
dc.publisherAmerican Chemical Society (ACS)
dc.subjectarrays
dc.subjectlaser interference lithography
dc.subjectnanofabrication
dc.subjectnanowire
dc.subjectZnO
dc.titleWafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays
dc.typeArticle
dc.identifier.journalNano Letters
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United States
dc.contributor.institutionThe George W. Woodruff School of Mechanical Engineering, Atlanta, United States
kaust.grant.numberDMS0706436
kaust.grant.numberCMMI 0403671


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