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    Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (<mml:math altimg="si0001.gif" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/

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    Type
    Article
    Authors
    Young, Erin C.
    Yonkee, Benjamin P.
    Wu, Feng
    Saifaddin, Burhan K.
    Cohen, Daniel A.
    DenBaars, Steve P.
    Nakamura, Shuji
    Speck, James S.
    Date
    2015-09
    Permanent link to this record
    http://hdl.handle.net/10754/600122
    
    Metadata
    Show full item record
    Abstract
    © 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.
    Citation
    Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, et al. (2015) Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (<mml:math altimg=“si0001.gif” overflow=“scroll” xmlns:xocs=“http://www.elsevier.com/xml/xocs/dtd” xmlns:xs=“http://www.w3.org/2001/XMLSchema” xmlns:xsi=“http://www.w3.org/2001/XMLSchema-instance” xmlns=“http://www.elsevier.com/xml/ja/dtd” xmlns:ja=“http://www.elsevier.com/xml/ja/dtd” xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:tb=“http://www.elsevier.com/xml/common/table/dtd” xmlns:sb=“http://www.elsevier.com/xml/common/struct-bib/dtd” xmlns:ce=“http://www.elsevier.com/xml/common/dtd” xmlns:xlink=“http://www.w3.org/1999/xlink” xmlns:cals=“http://www.elsevier.com/xml/common/cals/dtd” xmlns:sa=“http://www.elsevier.com/xml/common/struct-aff/dtd”><mml:mn>20</mml:mn><mml:mover accent=“true”><mml:mn>2</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>1</mml:mn></mml:math>) AlGaN/GaN buffer layers. Journal of Crystal Growth 425: 389–392. Available: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.081.
    Sponsors
    This work was supported by the KAUST-KACST-UCSB Solid State Lighting Program and the DARPA CMUVT program (PM: Dan Green).
    Publisher
    Elsevier BV
    Journal
    Journal of Crystal Growth
    DOI
    10.1016/j.jcrysgro.2015.02.081
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.jcrysgro.2015.02.081
    Scopus Count
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