Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (<mml:math altimg="si0001.gif" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Saifaddin, Burhan K.; Cohen, Daniel A.; DenBaars, Steve P.; Nakamura, Shuji; Speck, James S.

Type

Article

Authors

Young, Erin C.
Yonkee, Benjamin P.
Wu, Feng
Saifaddin, Burhan K.
Cohen, Daniel A.
DenBaars, Steve P.
Nakamura, Shuji
Speck, James S.

Date

2015-09

Permanent link to this record

http://hdl.handle.net/10754/600122

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Abstract

© 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.

Citation

Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, et al. (2015) Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (<mml:math altimg=“si0001.gif” overflow=“scroll” xmlns:xocs=“http://www.elsevier.com/xml/xocs/dtd” xmlns:xs=“http://www.w3.org/2001/XMLSchema” xmlns:xsi=“http://www.w3.org/2001/XMLSchema-instance” xmlns=“http://www.elsevier.com/xml/ja/dtd” xmlns:ja=“http://www.elsevier.com/xml/ja/dtd” xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:tb=“http://www.elsevier.com/xml/common/table/dtd” xmlns:sb=“http://www.elsevier.com/xml/common/struct-bib/dtd” xmlns:ce=“http://www.elsevier.com/xml/common/dtd” xmlns:xlink=“http://www.w3.org/1999/xlink” xmlns:cals=“http://www.elsevier.com/xml/common/cals/dtd” xmlns:sa=“http://www.elsevier.com/xml/common/struct-aff/dtd”><mml:mn>20</mml:mn><mml:mover accent=“true”><mml:mn>2</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>1</mml:mn></mml:math>) AlGaN/GaN buffer layers. Journal of Crystal Growth 425: 389–392. Available: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.081.