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    Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films

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    Type
    Article
    Authors
    Tham, Douglas
    Heath, James R.
    Date
    2010-11-10
    Permanent link to this record
    http://hdl.handle.net/10754/600117
    
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    Abstract
    A photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light, which permits a number of simplifying approximations. Using photocurrent measurements as a probe of the absorptance, we show that the NWA optical properties can be accurately modeled with rigorous coupled-wave analysis. The densely structured NWAs behave as homogeneous birefringent materials into the ultraviolet with effective optical properties that are accurately modeled using the dielectric functions of bulk Si and SiO 2, coupled with a physical model for the NWA derived from ellipsometry and transmission electron microscopy. © 2010 American Chemical Society.
    Citation
    Tham D, Heath JR (2010) Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films. Nano Lett 10: 4429–4434. Available: http://dx.doi.org/10.1021/nl102199b.
    Sponsors
    This work was funded by the Department of Energy (DE-FG02-04ER46175). D.T. gratefully acknowledges support by the KAUST Scholar Award. Minority carrier diffusion length measurements were made at the Molecular Materials Research Center of the Beckman Institute, while FIB lift-out and TEM imaging were performed in the Kavli Nanoscience Institute, both at the California Institute of Technology.
    Publisher
    American Chemical Society (ACS)
    Journal
    Nano Letters
    DOI
    10.1021/nl102199b
    PubMed ID
    20931993
    ae974a485f413a2113503eed53cd6c53
    10.1021/nl102199b
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