Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer
dc.contributor.author | Mantey, J. | |
dc.contributor.author | Hsu, W. | |
dc.contributor.author | James, J. | |
dc.contributor.author | Onyegam, E. U. | |
dc.contributor.author | Guchhait, S. | |
dc.contributor.author | Banerjee, S. K. | |
dc.date.accessioned | 2016-02-28T06:42:59Z | |
dc.date.available | 2016-02-28T06:42:59Z | |
dc.date.issued | 2013-05-17 | |
dc.identifier.citation | Mantey J, Hsu W, James J, Onyegam EU, Guchhait S, et al. (2013) Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer. Applied Physics Letters 102: 192111. Available: http://dx.doi.org/10.1063/1.4807500. | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.doi | 10.1063/1.4807500 | |
dc.identifier.uri | http://hdl.handle.net/10754/600116 | |
dc.description.abstract | Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC. | |
dc.description.sponsorship | This work was supported in part by a grant from KAUST and the NSF NNIN program. | |
dc.publisher | AIP Publishing | |
dc.title | Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer | |
dc.type | Article | |
dc.identifier.journal | Applied Physics Letters | |
dc.contributor.institution | University of Texas at Austin, Austin, United States | |
dc.date.published-online | 2013-05-17 | |
dc.date.published-print | 2013-05-13 |