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dc.contributor.authorMantey, J.
dc.contributor.authorHsu, W.
dc.contributor.authorJames, J.
dc.contributor.authorOnyegam, E. U.
dc.contributor.authorGuchhait, S.
dc.contributor.authorBanerjee, S. K.
dc.date.accessioned2016-02-28T06:42:59Z
dc.date.available2016-02-28T06:42:59Z
dc.date.issued2013
dc.identifier.citationMantey J, Hsu W, James J, Onyegam EU, Guchhait S, et al. (2013) Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer. Applied Physics Letters 102: 192111. Available: http://dx.doi.org/10.1063/1.4807500.
dc.identifier.issn0003-6951
dc.identifier.doi10.1063/1.4807500
dc.identifier.urihttp://hdl.handle.net/10754/600116
dc.description.abstractHere, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.
dc.description.sponsorshipThis work was supported in part by a grant from KAUST and the NSF NNIN program.
dc.publisherAIP Publishing
dc.titleUltra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer
dc.typeArticle
dc.identifier.journalApplied Physics Letters
dc.contributor.institutionUniversity of Texas at Austin, Austin, United States


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