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    Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

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    Type
    Article
    Authors
    Mantey, J.
    Hsu, W.
    James, J.
    Onyegam, E. U.
    Guchhait, S.
    Banerjee, S. K.
    Date
    2013-05-17
    Online Publication Date
    2013-05-17
    Print Publication Date
    2013-05-13
    Permanent link to this record
    http://hdl.handle.net/10754/600116
    
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    Abstract
    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.
    Citation
    Mantey J, Hsu W, James J, Onyegam EU, Guchhait S, et al. (2013) Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer. Applied Physics Letters 102: 192111. Available: http://dx.doi.org/10.1063/1.4807500.
    Sponsors
    This work was supported in part by a grant from KAUST and the NSF NNIN program.
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4807500
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4807500
    Scopus Count
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