Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer
Online Publication Date2013-05-17
Print Publication Date2013-05-13
Permanent link to this recordhttp://hdl.handle.net/10754/600116
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AbstractHere, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.
CitationMantey J, Hsu W, James J, Onyegam EU, Guchhait S, et al. (2013) Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer. Applied Physics Letters 102: 192111. Available: http://dx.doi.org/10.1063/1.4807500.
SponsorsThis work was supported in part by a grant from KAUST and the NSF NNIN program.
JournalApplied Physics Letters