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dc.contributor.authorKong, Desheng
dc.contributor.authorRandel, Jason C.
dc.contributor.authorPeng, Hailin
dc.contributor.authorCha, Judy J.
dc.contributor.authorMeister, Stefan
dc.contributor.authorLai, Keji
dc.contributor.authorChen, Yulin
dc.contributor.authorShen, Zhi-Xun
dc.contributor.authorManoharan, Hari C.
dc.contributor.authorCui, Yi
dc.date.accessioned2016-02-28T06:34:47Z
dc.date.available2016-02-28T06:34:47Z
dc.date.issued2010-01-13
dc.identifier.citationKong D, Randel JC, Peng H, Cha JJ, Meister S, et al. (2010) Topological Insulator Nanowires and Nanoribbons. Nano Lett 10: 329–333. Available: http://dx.doi.org/10.1021/nl903663a.
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.pmid20030392
dc.identifier.doi10.1021/nl903663a
dc.identifier.urihttp://hdl.handle.net/10754/600036
dc.description.abstractRecent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.
dc.description.sponsorshipY.C. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-11-001-12). STM work (J.C.R. and H.C.M.) and part of transport measurements (Z.-X. S.) were supported by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SSF00515, K.L. acknowledges the KAUST Postdoctoral Fellowship support (No. KUS-F1-033-02).
dc.publisherAmerican Chemical Society (ACS)
dc.subjectBismuth selenide
dc.subjectNanoribbon
dc.subjectNanowire
dc.subjectTopological insulator
dc.titleTopological Insulator Nanowires and Nanoribbons
dc.typeArticle
dc.identifier.journalNano Letters
dc.contributor.institutionStanford University, Palo Alto, United States
dc.contributor.institutionStanford Linear Accelerator Center, Menlo Park, United States
dc.contributor.institutionCollege of Chemistry and Molecular Engineering, Peking University, Beijing, China
kaust.grant.numberKUS-11-001-12
kaust.grant.numberKUS-F1-033-02


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