Tailoring magnetoresistance at the atomic level: An ab initio study
| dc.contributor.author | Tao, Kun | |
| dc.contributor.author | Stepanyuk, V. S. | |
| dc.contributor.author | Rungger, I. | |
| dc.contributor.author | Sanvito, S. | |
| dc.date.accessioned | 2016-02-28T06:31:06Z | |
| dc.date.available | 2016-02-28T06:31:06Z | |
| dc.date.issued | 2012-01-05 | |
| dc.identifier.citation | Tao K, Stepanyuk VS, Rungger I, Sanvito S (2012) Tailoring magnetoresistance at the atomic level: An ab initio study . Physical Review B 85. Available: http://dx.doi.org/10.1103/PhysRevB.85.045406. | |
| dc.identifier.issn | 1098-0121 | |
| dc.identifier.issn | 1550-235X | |
| dc.identifier.doi | 10.1103/PhysRevB.85.045406 | |
| dc.identifier.uri | http://hdl.handle.net/10754/599861 | |
| dc.description.abstract | The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society. | |
| dc.description.sponsorship | SS and IR acknowledge the Science Foundation Ireland (Grant No. 07/IN.1/I945) and the King Abdullah University of Science and Technology (ACRAB project). | |
| dc.publisher | American Physical Society (APS) | |
| dc.title | Tailoring magnetoresistance at the atomic level: An ab initio study | |
| dc.type | Article | |
| dc.identifier.journal | Physical Review B | |
| dc.contributor.institution | Max Planck Institute of Microstructure Physics, Halle, Germany | |
| dc.contributor.institution | Trinity College Dublin, Dublin, Ireland |