Tailoring magnetoresistance at the atomic level: An ab initio study
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AbstractThe possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.
CitationTao K, Stepanyuk VS, Rungger I, Sanvito S (2012) Tailoring magnetoresistance at the atomic level: An ab initio study . Physical Review B 85. Available: http://dx.doi.org/10.1103/PhysRevB.85.045406.
SponsorsSS and IR acknowledge the Science Foundation Ireland (Grant No. 07/IN.1/I945) and the King Abdullah University of Science and Technology (ACRAB project).
PublisherAmerican Physical Society (APS)
JournalPhysical Review B