Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere
AuthorsAltynnikov, A. G.
Gagarin, A. G.
Gaidukov, M. M.
Tumarkin, A. V.
Petrov, P. K.
Kozyrev, A. B.
Permanent link to this recordhttp://hdl.handle.net/10754/599805
MetadataShow full item record
AbstractThe impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).
CitationAltynnikov AG, Gagarin AG, Gaidukov MM, Tumarkin AV, Petrov PK, et al. (2014) Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere. Applied Physics Letters 104: 042903. Available: http://dx.doi.org/10.1063/1.4863436.
SponsorsThis study was partially supported by the Ministry of Science and Education of the Russian Federation and by RFBR, research Project No. 13-02-12096 ofi-m. P. K. Petrov and N. Alford acknowledge the financial support from the EPSRC, UK (grants EP/G060940/1 and EP/H023003/1) and the King Abdullah University for Science and Technology (KAUST) Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP).
JournalApplied Physics Letters