Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere
Type
ArticleAuthors
Altynnikov, A. G.Gagarin, A. G.
Gaidukov, M. M.
Tumarkin, A. V.
Petrov, P. K.
Alford, N.
Kozyrev, A. B.
Date
2014-01-27Permanent link to this record
http://hdl.handle.net/10754/599805
Metadata
Show full item recordAbstract
The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).Citation
Altynnikov AG, Gagarin AG, Gaidukov MM, Tumarkin AV, Petrov PK, et al. (2014) Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere. Applied Physics Letters 104: 042903. Available: http://dx.doi.org/10.1063/1.4863436.Sponsors
This study was partially supported by the Ministry of Science and Education of the Russian Federation and by RFBR, research Project No. 13-02-12096 ofi-m. P. K. Petrov and N. Alford acknowledge the financial support from the EPSRC, UK (grants EP/G060940/1 and EP/H023003/1) and the King Abdullah University for Science and Technology (KAUST) Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP).Publisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.4863436