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dc.contributor.authorHu, Youfan
dc.contributor.authorZhou, Jun
dc.contributor.authorYeh, Ping-Hung
dc.contributor.authorLi, Zhou
dc.contributor.authorWei, Te-Yu
dc.contributor.authorWang, Zhong Lin
dc.date.accessioned2016-02-28T06:10:11Z
dc.date.available2016-02-28T06:10:11Z
dc.date.issued2010-05-31
dc.identifier.citationHu Y, Zhou J, Yeh P-H, Li Z, Wei T-Y, et al. (2010) Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts. Advanced Materials 22: 3327–3332. Available: http://dx.doi.org/10.1002/adma.201000278.
dc.identifier.issn0935-9648
dc.identifier.pmid20517870
dc.identifier.doi10.1002/adma.201000278
dc.identifier.urihttp://hdl.handle.net/10754/599803
dc.description.abstractA Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a key idea of using the Schottky contact to achieve supersensitive and fast response nanowire-based nanosensors. We have illustrated this idea on several platforms: UV sensors, biosensors, and gas sensors. The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipThis research was supported by the National Science Foundation (NSF) (DMS 0706436, CMMI 0403671, ENG/CMMI 112024), DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership, and the World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan.
dc.publisherWiley
dc.titleSupersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts
dc.typeArticle
dc.identifier.journalAdvanced Materials
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United States
dc.date.published-online2010-05-31
dc.date.published-print2010-08-10


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