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dc.contributor.authorChandiran, Aravind Kumar
dc.contributor.authorTetreault, Nicolas
dc.contributor.authorHumphry-Baker, Robin
dc.contributor.authorKessler, Florian
dc.contributor.authorBaranoff, Etienne
dc.contributor.authorYi, Chenyi
dc.contributor.authorNazeeruddin, Mohammad Khaja
dc.contributor.authorGrätzel, Michael
dc.date.accessioned2016-02-28T06:10:00Z
dc.date.available2016-02-28T06:10:00Z
dc.date.issued2012-07-06
dc.identifier.citationChandiran AK, Tetreault N, Humphry-Baker R, Kessler F, Baranoff E, et al. (2012) Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells . Nano Lett 12: 3941–3947. Available: http://dx.doi.org/10.1021/nl301023r.
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.pmid22681486
dc.identifier.doi10.1021/nl301023r
dc.identifier.urihttp://hdl.handle.net/10754/599795
dc.description.abstractHerein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga 2O 3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO 2 conduction band and the hole injection into the electrolyte are characterized in detail. © 2012 American Chemical Society.
dc.description.sponsorshipThe authors acknowledge the financial contribution from EU FP7 project "ORION" grant agreement no. NMP-229036. This publication is partially based on work supported by the Center for Advanced Molecular Photovoltaics (award no. KUS-C1-015- 21), made by King Abdullah University of Science and Technology (KAUST). A.K.C. is grateful for financial support from the Balzan foundation as part of the 2009 Balzan Prize award to M.G. A.K.C. also thanks Dr. Hoi Nok Tsao and Dr. Aswani Yella for their valuable suggestions on electrolyte composition.
dc.publisherAmerican Chemical Society (ACS)
dc.subjectAtomic layer deposition
dc.subjectdye-sensitized solar cell
dc.subjectelectron recombination
dc.subjectgallium oxide
dc.subjecttunnelling layer
dc.titleSubnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells
dc.typeArticle
dc.identifier.journalNano Letters
dc.contributor.institutionEcole Polytechnique Federale de Lausanne, Lausanne, Switzerland
kaust.grant.numberKUS-C1-015- 21
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)
dc.date.published-online2012-07-06
dc.date.published-print2012-08-08


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