Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells
AuthorsChandiran, Aravind Kumar
Nazeeruddin, Mohammad Khaja
KAUST Grant NumberKUS-C1-015- 21
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AbstractHerein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga 2O 3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO 2 conduction band and the hole injection into the electrolyte are characterized in detail. © 2012 American Chemical Society.
CitationChandiran AK, Tetreault N, Humphry-Baker R, Kessler F, Baranoff E, et al. (2012) Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells . Nano Lett 12: 3941–3947. Available: http://dx.doi.org/10.1021/nl301023r.
SponsorsThe authors acknowledge the financial contribution from EU FP7 project "ORION" grant agreement no. NMP-229036. This publication is partially based on work supported by the Center for Advanced Molecular Photovoltaics (award no. KUS-C1-015- 21), made by King Abdullah University of Science and Technology (KAUST). A.K.C. is grateful for financial support from the Balzan foundation as part of the 2009 Balzan Prize award to M.G. A.K.C. also thanks Dr. Hoi Nok Tsao and Dr. Aswani Yella for their valuable suggestions on electrolyte composition.
PublisherAmerican Chemical Society (ACS)
CollectionsPublications Acknowledging KAUST Support
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