Studying the Mechanism of Hybrid Nanoparticle Photoresists: Effect of Particle Size on Photopatterning
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Abstract© 2015 American Chemical Society. Hf-based hybrid photoresist materials with three different organic ligands were prepared by a sol-gel-based method, and their patterning mechanism was investigated in detail. All hybrid nanoparticle resists are patternable using UV exposure. Their particle sizes show a dramatic increase from the initial 3-4 nm to submicron size after exposure, with no apparent inorganic content or thermal property change detected. XPS results showed that the mass percentage of the carboxylic group in the structure of nanoparticles decreased with increasing exposure duration. The particle coarsening sensitivities of those hybrid nanoparticles are consistent with their EUV performance. The current work provides an understanding for the development mechanism and future guidance for the design and processing of high performance resist materials for large-scale microelectronics device fabrication.
CitationLi L, Chakrabarty S, Spyrou K, Ober CK, Giannelis EP (2015) Studying the Mechanism of Hybrid Nanoparticle Photoresists: Effect of Particle Size on Photopatterning. Chem Mater 27: 5027–5031. Available: http://dx.doi.org/10.1021/acs.chemmater.5b01506.
SponsorsThe authors gratefully acknowledge the funding support from SEMATECH and facilities support from Lawrence Berkeley National Laboratory (LBNL), Cornell Nanoscale Science and Technology (CNF), the Cornell Center for Materials Research (CCMR), and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU).
PublisherAmerican Chemical Society (ACS)
JournalChemistry of Materials