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dc.contributor.authorZou, Bin
dc.contributor.authorPetrov, Peter K.
dc.contributor.authorAlford, Neil McN.
dc.date.accessioned2016-02-28T06:07:55Z
dc.date.available2016-02-28T06:07:55Z
dc.date.issued2013-01-08
dc.identifier.citationZou B, Petrov PK, Alford NM (2013) SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures. J Mater Res 28: 702–707. Available: http://dx.doi.org/10.1557/jmr.2012.409.
dc.identifier.issn0884-2914
dc.identifier.issn2044-5326
dc.identifier.doi10.1557/jmr.2012.409
dc.identifier.urihttp://hdl.handle.net/10754/599704
dc.description.abstractA comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants, resistivity, and oxygen partial pressures used. Ru deficiency detected only in films deposited at lower oxygen pressures (<50 mTorr), resulted in an elongation of the in-plane and out-of-plane lattice constants and an increase in the film resistivity. When deposited with oxygen partial pressure of 50 mTorr, SrRuO3 films had lattice parameters matching those of bulk SrRuO3 material and exhibited room temperature resistivity of 320 μΩ·cm. The resistivity of SrRuO 3/MgO films decreased with increasing oxygen partial pressure. Copyright © 2013 Materials Research Society.
dc.description.sponsorshipWe acknowledge the financial support from theEngineering and Physical Sciences Research Counciland the King Abdullah University of Science andTechnology.
dc.publisherCambridge University Press (CUP)
dc.subjectepitaxy
dc.subjectlaser ablation
dc.subjectmetallic conductor
dc.titleSrRuO3 thin films grown on MgO substrates at different oxygen partial pressures
dc.typeArticle
dc.identifier.journalJournal of Materials Research
dc.contributor.institutionImperial College London, London, United Kingdom
dc.date.published-online2013-01-08
dc.date.published-print2013-03


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