Show simple item record

dc.contributor.authorDiao, Ying
dc.contributor.authorTee, Benjamin C-K.
dc.contributor.authorGiri, Gaurav
dc.contributor.authorXu, Jie
dc.contributor.authorKim, Do Hwan
dc.contributor.authorBecerril, Hector A.
dc.contributor.authorStoltenberg, Randall M.
dc.contributor.authorLee, Tae Hoon
dc.contributor.authorXue, Gi
dc.contributor.authorMannsfeld, Stefan C. B.
dc.contributor.authorBao, Zhenan
dc.date.accessioned2016-02-28T06:06:54Z
dc.date.available2016-02-28T06:06:54Z
dc.date.issued2013-06-02
dc.identifier.citationDiao Y, Tee BC-K, Giri G, Xu J, Kim DH, et al. (2013) Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains. Nat Mater 12: 665–671. Available: http://dx.doi.org/10.1038/nmat3650.
dc.identifier.issn1476-1122
dc.identifier.issn1476-4660
dc.identifier.pmid23727951
dc.identifier.doi10.1038/nmat3650
dc.identifier.urihttp://hdl.handle.net/10754/599659
dc.description.abstractSolution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach - termed fluid-enhanced crystal engineering (FLUENCE) - that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V-1 s -1 and 11 cm2 V-1 s-1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. © 2013 Macmillan Publishers Limited. All rights reserved.
dc.description.sponsorshipThis work is supported by the Department of Energy, Laboratory Directed Research and Development funding, under contract DE-AC02-76SF00515 (Y.D.). We are grateful to M. Toney at Stanford Synchrotron Radiation Lighsource (SSRL) for valuable input. We give thanks to J. E. Anthony and M. M. Nelson of 3M for providing high-purity TIPS-pentacene. We appreciate helpful discussions with O. Goto from the Chemical Engineering department at Stanford. Portions of this research were carried out at the Stanford Synchrotron Radiation Lightsource, a national user facility operated by Stanford University on behalf of the US DOE, Office of Basic Energy Sciences. B.C-K.T. acknowledges support from a National Science Scholarship from the Agency for Science, Technology and Research (A*STAR), Singapore. G.G., H.A.B. and Z.B. acknowledge support from the National Science Foundation DMR-Solid State Chemistry (DMR-0705687-002). J.X. and G.X. acknowledge the National Science Foundation of China (NSFC 51133002) for financial support. D.H.K. and Z.B. acknowledge the support by the Center for Advanced Molecular Photovoltaics, award no. KUS-C1-015-21, made by King Abdullah University of Science and Technology. R.M.S. acknowledges financial support from the National Science Foundation Graduate Research Fellowship Program. T.H.L. acknowledges support from Toshiba through the Stanford CIS-FMA programme and the ILJU foundation in South Korea.
dc.publisherSpringer Nature
dc.titleSolution coating of large-area organic semiconductor thin films with aligned single-crystalline domains
dc.typeArticle
dc.identifier.journalNature Materials
dc.contributor.institutionStanford University, Palo Alto, United States
dc.contributor.institutionNanjing University, Nanjing, China
dc.contributor.institutionStanford Synchrotron Radiation Laboratory, Menlo Park, United States
dc.contributor.institutionSoongsil University, Seoul, South Korea
dc.contributor.institutionBrigham Young University, Provo, United States
dc.contributor.institutionLockheed Martin Space Systems, Sunnyvale, United States
kaust.grant.numberKUS-C1-015-21
kaust.grant.fundedcenterCenter for Advanced Molecular Photovoltaics (CAMP)


This item appears in the following Collection(s)

Show simple item record