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dc.contributor.authorHuang, Chi-Te
dc.contributor.authorSong, Jinhui
dc.contributor.authorTsai, Chung-Min
dc.contributor.authorLee, Wei-Fan
dc.contributor.authorLien, Der-Hsien
dc.contributor.authorGao, Zhiyuan
dc.contributor.authorHao, Yue
dc.contributor.authorChen, Lih-Juann
dc.contributor.authorWang, Zhong Lin
dc.date.accessioned2016-02-28T06:06:23Z
dc.date.available2016-02-28T06:06:23Z
dc.date.issued2010-07-30
dc.identifier.citationHuang C-T, Song J, Tsai C-M, Lee W-F, Lien D-H, et al. (2010) Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage. Advanced Materials 22: 4008–4013. Available: http://dx.doi.org/10.1002/adma.201000981.
dc.identifier.issn0935-9648
dc.identifier.pmid20677189
dc.identifier.doi10.1002/adma.201000981
dc.identifier.urihttp://hdl.handle.net/10754/599637
dc.description.abstractPiezoelectric potential of a InN nanowire (NW) growing along [011̄0] can be positive, negative, and zero depending on the direction of the applied transverse force. By measuring the output voltage of a InN-NW-based nanogenerator, about 40% to 55% of output voltages are within the range of ?1 and ?20 mV, and 25% to 30% of output voltages would exceed ?100 mV. Some output voltages could reach the magnitude of ?1000 mV, showing its great potential for fabricating high-output nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipCTH and JHS contributed equally to the research in this paper. Research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST, and NSF (DMS0706436, CMMI 0403671). Thanks are also due to National Science Council of Taiwan, Republic of China for a fellowship to study abroad (C. T. Huang). (NSC97-2917-1-007-110)
dc.publisherWiley
dc.titleSingle-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage
dc.typeArticle
dc.identifier.journalAdvanced Materials
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, United States
dc.contributor.institutionNational Tsing Hua University, Hsin-chu, Taiwan
dc.contributor.institutionXidian University, Xi'an, China
dc.date.published-online2010-07-30
dc.date.published-print2010-09-22


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