Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage
dc.contributor.author | Huang, Chi-Te | |
dc.contributor.author | Song, Jinhui | |
dc.contributor.author | Tsai, Chung-Min | |
dc.contributor.author | Lee, Wei-Fan | |
dc.contributor.author | Lien, Der-Hsien | |
dc.contributor.author | Gao, Zhiyuan | |
dc.contributor.author | Hao, Yue | |
dc.contributor.author | Chen, Lih-Juann | |
dc.contributor.author | Wang, Zhong Lin | |
dc.date.accessioned | 2016-02-28T06:06:23Z | |
dc.date.available | 2016-02-28T06:06:23Z | |
dc.date.issued | 2010-07-30 | |
dc.identifier.citation | Huang C-T, Song J, Tsai C-M, Lee W-F, Lien D-H, et al. (2010) Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage. Advanced Materials 22: 4008–4013. Available: http://dx.doi.org/10.1002/adma.201000981. | |
dc.identifier.issn | 0935-9648 | |
dc.identifier.pmid | 20677189 | |
dc.identifier.doi | 10.1002/adma.201000981 | |
dc.identifier.uri | http://hdl.handle.net/10754/599637 | |
dc.description.abstract | Piezoelectric potential of a InN nanowire (NW) growing along [011̄0] can be positive, negative, and zero depending on the direction of the applied transverse force. By measuring the output voltage of a InN-NW-based nanogenerator, about 40% to 55% of output voltages are within the range of ?1 and ?20 mV, and 25% to 30% of output voltages would exceed ?100 mV. Some output voltages could reach the magnitude of ?1000 mV, showing its great potential for fabricating high-output nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | |
dc.description.sponsorship | CTH and JHS contributed equally to the research in this paper. Research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST, and NSF (DMS0706436, CMMI 0403671). Thanks are also due to National Science Council of Taiwan, Republic of China for a fellowship to study abroad (C. T. Huang). (NSC97-2917-1-007-110) | |
dc.publisher | Wiley | |
dc.title | Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage | |
dc.type | Article | |
dc.identifier.journal | Advanced Materials | |
dc.contributor.institution | Georgia Institute of Technology, Atlanta, United States | |
dc.contributor.institution | National Tsing Hua University, Hsin-chu, Taiwan | |
dc.contributor.institution | Xidian University, Xi'an, China | |
dc.date.published-online | 2010-07-30 | |
dc.date.published-print | 2010-09-22 |