Show simple item record

dc.contributor.authorDas, Ayan
dc.contributor.authorHeo, Junseok
dc.contributor.authorJankowski, Marc
dc.contributor.authorGuo, Wei
dc.contributor.authorZhang, Lei
dc.contributor.authorDeng, Hui
dc.contributor.authorBhattacharya, Pallab
dc.date.accessioned2016-02-28T05:53:00Z
dc.date.available2016-02-28T05:53:00Z
dc.date.issued2011-08-04
dc.identifier.citationDas A, Heo J, Jankowski M, Guo W, Zhang L, et al. (2011) Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser. Physical Review Letters 107. Available: http://dx.doi.org/10.1103/PhysRevLett.107.066405.
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.pmid21902349
dc.identifier.doi10.1103/PhysRevLett.107.066405
dc.identifier.urihttp://hdl.handle.net/10754/599538
dc.description.abstractWe report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.
dc.description.sponsorshipThe work was supported by KAUST under Grant No. N012509-00. L. Z. acknowledges support by the NSF.
dc.publisherAmerican Physical Society (APS)
dc.titleRoom Temperature Ultralow Threshold GaN Nanowire Polariton Laser
dc.typeArticle
dc.identifier.journalPhysical Review Letters
dc.contributor.institutionUniversity Michigan Ann Arbor, Ann Arbor, United States
kaust.grant.numberN012509-00


This item appears in the following Collection(s)

Show simple item record